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| e PTB 20151 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 45 Watts, 1.8-2.0 GHz Class AB Characteristics 40% Collector Efficiency at 45 W Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 Output Power (Watts) 201 51 LOT COD E VCC = 26 V ICQ = 100 mA f = 2.0 GHz Input Power (Watts) Package 20223 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25 C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70 C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 7.7 200 1.2 -40 to +150 0.85 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20151 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions VBE = 0 V, IC = 100 mA IB = 0 A, IC = 100 mA, RBE = 22 IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CES V(BR)CER V(BR)EBO hFE Min 50 50 4.0 20 Typ -- -- 5.0 40 Max -- -- -- -- Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, POUT = 10 W, ICQ = 100 mA, f = 2 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, POUT = 45 W, ICQ = 100 mA, f = 2 GHz) Collector Efficiency (VCC = 26 Vdc, POUT = 45 W, ICQ = 100 mA, f = 2 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 22.5 W, ICQ = 100 mA, f = 2 GHz--all phase angles at frequency of test) Symbol Gpe P-1dB C Min 8.0 45.0 40 -- Typ 9.5 -- 47 -- Max -- -- -- 5:1 Units dB Watts % -- Typical Performance POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Power & Efficiency 12 Output Power (W) 11 60 Efficiency (%) 50 40 Gain (dB) 8 7 1750 70 10 Gain (dB) 8 50 Efficiency (%) 6 4 2 Return Loss (dB) 0 1900 40 - 30 5 -15 20 -25 10 Broadband Test Fixture Performance 60 Gain 10 9 VCC = 26 V ICQ = 100 mA POUT = 45 W VCC = 26 V ICQ = 100 mA 30 20 2050 1800 1850 1900 1950 2000 1925 1950 1975 -35 0 2000 Frequency (MHz) Frequency (MHz) 2 5/4/98 Return Loss (dB) Efficiency (%) Gain (dB) e Output Power vs. Supply Voltage 70 -32 -34 PTB 20151 Intermodulation Distortion vs. Power Output Output Power (Watts) 65 IMD (dBc) 60 55 50 45 40 22 23 24 25 26 27 -36 VCC = 26 V -38 -40 -42 0 10 20 30 40 50 ICQ = 100 mA f = 2.0 GHz ICQ = 60 mA f1 = 1.999 GHz f2 = 1.998 GHz Supply Voltage (Volts) Output Power (Watts-PEP) Power Gain vs. Output Power 12 11 Power Gain (dB) 10 9 8 7 6 ICQ = 100 mA ICQ = 50 mA ICQ = 25 mA VCC = 26 V f = 2.0 GHz 0.1 1.0 10.0 100.0 Output Power (Watts) Impedance Data (VCC = 26 Vdc, POUT = 45 W, ICQ = 100 mA) Z Source Z Load Frequency GHz 1.75 1.80 1.85 1.90 1.95 2.00 2.05 3 R 3.15 3.10 3.50 3.70 3.90 4.10 3.75 Z Source jX -1.7 -2.7 -3.1 -2.9 -2.7 -2.1 -1.0 R 3.3 4.1 4.3 3.3 2.6 2.4 2.3 Z Load jX -0.8 -1.2 -1.5 -1.3 -1.1 -0.9 -0.7 5/11/98 PTB 20151 Z0 = 10 e Test Circuit Artwork (1 inch ) Parts Layout (not to scale) 4 5/4/98 e PTB 20151 * Thermally linked to RF device. Schematic for f = 2 GHz NPN RF Transistor Microstrip 50 .1 2 GHz Microstrip 75 .065 2 GHz Microstrip 16 .095 2 GHz Microstrip 12.5 .055 2 GHz Microstrip 9.7 .055 2 GHz Microstrip 12.5 .065 2 GHz Microstrip 22 C1, C6 0.1 F 1206 Chip C2, C7 10 F, 35 V SMT Tantalum C3, C4, C8, C10 20 pF ATC-100 C5, C9 0-4 pf Johanson Trimmer Q1 PTB 20151 L1 L2, L4 L3 R1 Board 56 nh SMT Inductor 3 Turn #22, 0.25" O.D. 4 mm. SMT Ferrite 22 1206 SMT Resistor 0.031 G-200 Solid Copper Bottom, AlliedSignal l1, l9 l2 l3 l4 l5 l6 l7 Bias Parts (not shown on layout) Q2 BCP 56 D1 BAV 99 C10, C11 0.1 pF R2 2K R3, R4 10 SMT NPN Transistor Diode SMT Capacitor Potentiometer 1206 SMT Resistor Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20151 Uen Rev. C 09-28-98 5 |
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